The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Aug. 11, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tsunehiro Ino, Fujisawa, JP;

Yusuke Nakajima, Yokohama, JP;

Akira Takashima, Fuchu, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02);
Abstract

A method for manufacturing an oxide film according to an embodiment includes forming a first film containing aluminum (Al) and nitrogen (N), and forming a second film containing aluminum (Al) and oxygen (O) by oxidizing the first film in an atmosphere containing heavy water (DO).


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Ino, Tsunehiro. (2026). Method for manufacturing oxide film, method for manufacturing semiconductor memory device, semiconductor device, and semiconductor memory device (U.S. Patent No. 12757396). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757396

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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