The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Aug. 03, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Dongmen Song, Wuhan, CN;

Fandong Liu, Wuhan, CN;

Wenxiang Xu, Wuhan, CN;

Mingli Du, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); H10B 12/05 (2023.02);
Abstract

A memory device, having a plurality of first-word-lines, each first-word-line having a first portion, a second portion, and a third portion; a plurality of second-word-lines, each second-word-line having a first portion, a second portion, and a third portion; and a memory array having a first side, a second side laterally opposite the first side, and a third side. The first portions of each first-word-line and each second-word-line are spaced apart from their respective third portions. The second portion of each first-word-line and the second portion of each second-word-line are non-parallel and non-co-linear with their respective first portions and third portions. Each first-word-line is disposed such that its second portion is adjacent to the first side, and each second-word-line is disposed such that its second portion is adjacent to the second side. The memory device further has a plurality of first-side-word-line-pickup-structures, and a plurality of second-side-word-line-pickup-structures.


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