Semiconductor devices having landing pad structures

Abstract

A semiconductor device includes a substrate including an active region; a cell gate structure disposed in the substrate, crossing the active region, and extending in a first horizontal direction; bitline structures crossing the cell gate structure and extending in a second horizontal direction intersecting the first horizontal direction; a contact plug disposed between the bitline structures; a landing pad structure disposed on the contact plug and including a lower landing pad and an upper landing pad on the lower landing pad, wherein the upper landing pad includes a cavity; a conductive pattern disposed in the cavity of the upper landing pad; and an insulating pattern structure in contact with one of the bitline structures and in contact with the landing pad structure.