The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jul. 22, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Semiconductor devices are provided. A first memory cell includes a first pull-down transistor, a first pass-gate transistor, a first pull-up transistor, and a first isolation transistor. A second memory cell includes a second pull-down transistor, a second pass-gate transistor, a second pull-up transistor, and a second isolation transistor. The first and second isolation transistors share a common gate connected to a VDD line. The gates of the first and second pass-gate transistors are connected to a first WL landing pad and a second WL landing pad. The sources of the first and second pass-gate transistors are connected to the first and second bit lines. The VDD line, the first and second WL landing pads, and the first and second bit lines are formed in a first metal layer, and the VDD line, the first and second bit lines are longer than the first and second WL landing pads.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile