The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jun. 17, 2024
Microsemi Soc Corp., Chandler, AZ (US);
Victor Nguyen, San Ramon, CA (US);
Microsemi SoC Corp., Chandler, AZ (US);
Abstract
A memory cell comprises a plurality of n-type metal oxide semiconductor (NMOS) transistors and a plurality of p-type metal oxide semiconductor (PMOS) transistors. First and second NMOS transistors are electrically connected to one another in a cross-coupled configuration. First and second PMOS transistors are electrically connected to one another in a cross-coupled configuration. Third and fourth NMOS transistors are electrically connected to the first and second NMOS transistors in a cascode configuration. Third and fourth PMOS transistors are electrically connected to the first and second PMOS transistors in a cascode configuration. A fifth PMOS transistor includes a drain, a gate, and a source, wherein the drain is electrically connected to a gate of the second PMOS transistor and a drain of the first PMOS transistor, and the source is electrically connected to a gate of the first PMOS transistor and a drain of the second PMOS transistor.