The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Nov. 09, 2024
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;
Kristof J. P. Jacobs, Lier, BE;
Anjanashree Mankala Ramakrishna Sharma, Heverlee, BE;
Imec vzw, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Abstract
Examples include a method for localizing one or more defects in a semiconductor device. The method includes switching the semiconductor device on and off at a first frequency and switching an irradiating device on and off at a second frequency. The method also includes acquiring images of the semiconductor device and lock-in averaging the images with a first reference signal having the first frequency and a first phase, to obtain amplitudes indicative of temperatures at a surface of the semiconductor device and/or phase signals indicative of a depth location of the one or more defects in the semiconductor device. The method also includes lock-in averaging the images with a second reference signal having the second frequency and a second phase to obtain a topography of the surface of the semiconductor device. The first frequency is different from the second frequency and/or the first phase is different from the second phase.