The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Aug. 31, 2023
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

Drew Michael Hood, Newtown, CT (US);

Thomas M. Cameron, Newtown, CT (US);

Assignee:

Entegris, Inc., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F 7/28 (2006.01); C07F 7/00 (2006.01); C07F 17/00 (2006.01);
U.S. Cl.
CPC ...
C07F 17/00 (2013.01); C07F 7/003 (2013.01); C07F 7/28 (2013.01);
Abstract

The present disclosure relates to the field of precursors, more specifically precursors containing at least one fluorinated group. In some embodiments, the precursors are hafnium, zirconium, and titanium bis(cyclopentadienyl) precursors containing fluorinated alkoxides and amides. In some embodiments, the present disclosure relates to using precursors for deposition of group 4 containing thin films, such as HfOx, ZrOx, and TiOx film applications. These thin films can be used in a variety of applications including semiconductor device structures. The compounds of the present disclosure have been developed and synthesized to generate compounds that provide improvements in film applications, such as HfOx, ZrOx, and TiOx film applications. The improvements to the compounds of the present disclosure include increased molecule stability at delivery temperature and deposition temperature, improvements related to precursor film impurity levels, molecule volatility, molecule melting point, and step coverage.


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