The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jun. 15, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Liang Cheng, Changhua City, TW;
Sheng-Chau Chen, Tainan City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Forming a barrier layer and removing the barrier layer from an upper portion of a recess in which a metal-insulator-metal (MIM) structure will be formed allows for forming the MIM structure with fewer voids, which improves capacitance of the MIM structure. For example, a bottom layer anti-reflective coating may be deposited and etched back in order to allow for removal of the barrier layer from the upper portion of the recess but not from a bottom portion of the recess. Additionally, the barrier layer may be formed using physical vapor deposition, which reduces carbon impurities in the barrier layer as compared with using atomic layer deposition, which improves resistance for the MIM structure.