The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Jan. 11, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chia Chen Lee, Taipei City, TW;

Chia-Tien Wu, Taichung City, TW;

Shih-Wei Peng, Hsinchu City, TW;

Kuan Yu Chen, Hsinchu City, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H10W 20/00 (2026.01); H10W 20/42 (2026.01); H10W 20/43 (2026.01);
U.S. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/033 (2026.01); H10W 20/056 (2026.01); H10W 20/076 (2026.01); H10W 20/081 (2026.01); H10W 20/43 (2026.01);
Abstract

A connecting structure includes a first dielectric layer, a first connecting via in the first dielectric layer, a second connecting via in the first dielectric layer, and an isolation between the first connecting via and the second connecting via. The isolation separates the first and second connecting vias from each other. The first connecting via, the isolation and the second connecting via are line symmetrical about a central line perpendicular to a top surface of the first dielectric layer.


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