The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jun. 17, 2021
Lam Research Corporation, Fremont, CA (US);
Ieva Narkeviciute, Portland, OR (US);
Bhadri N. Varadarajan, Beaverton, OR (US);
Kashish Sharma, Tigard, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Graphene is selectively deposited on a metal layer relative to a dielectric layer of a semiconductor substrate. Dielectric material is selectively deposited on the dielectric layer relative to the metal layer of the semiconductor substrate. The graphene is a high-quality graphene film that serves as an inhibitor during deposition of the dielectric material. In some implementations, the dielectric material may be a metal oxide. In some implementations, the dielectric material may be a low-k dielectric material. The graphene remains throughout semiconductor integration processes. In some implementations, the graphene may be subsequently modified by to permit deposition on the surface of the graphene or the graphene may be subsequently removed.