The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jul. 31, 2024
Applied Materials, Inc., Santa Clara, CA (US);
Bin Yao, Santa Clara, CA (US);
Zihui Li, Santa Clara, CA (US);
Chia-Ling Kao, San Jose, CA (US);
Anchuan Wang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary semiconductor processing methods may include providing a pre-treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed having a first layer of silicon-and-germanium-containing material and a second layer of silicon-and-germanium-containing material may be housed within the processing region. A native oxide may be present. The methods may include contacting the substrate with the pre-treatment precursor to remove the native oxide. The methods may include contacting the substrate with an oxygen-containing precursor to oxidize at least a portion of the first layer of silicon-and-germanium-containing material and at least a portion of the second layer of silicon-and-germanium-containing material. The methods may include contacting the substrate with an etchant precursor to selectively etch the first layer of silicon-and-germanium-containing material.