The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Sep. 22, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Oscar Van Der Straten, Guilderland Center, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract

A semiconductor device including a magnetic tunnel junction (MTJ) stack, where a tunneling barrier of the MTJ stack is wider than a reference layer of the MTJ stack. A semiconductor device is provided. The semiconductor device including a magnetic tunnel junction (MTJ) stack, where a tunneling barrier of the MTJ stack is wider than a reference layer of the MTJ stack, where the tunneling barrier comprises a center portion and two outer portions, where the center portion is on an upper horizontal portion of the reference layer, and the two outer portions are on a slanted upper surface of an encapsulation layer surrounding the reference layer. Forming a magnetic tunnel junction (MTJ) stack, where a tunneling barrier of the MTJ stack is wider than a reference layer of the MTJ stack.


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