The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Sep. 26, 2023
Amazing Microelectronic Corp., New Taipei City, TW;
Chih-Wei Chen, Zhubei City, TW;
Che-Hao Chuang, Jhudong Township, TW;
Kun-Hsien Lin, Hsinchu City, TW;
AMAZING MICROELECTRONIC CORP., New Taipei City, TW;
Abstract
An electrostatic discharge protection device includes a P-type substrate, an N-type well, a first P-type heavily-doped area, an N-type doped area, and a first N-type heavily-doped area. The N-type well is formed in the P-type substrate. The first P-type heavily-doped area is formed in the N-type well. The N-type doped area and the first N-type heavily-doped area are formed in the P-type substrate. The N-type doped area is coupled to the N-type well through an external conductive wire decoupled to the first P-type heavily-doped area. Alternatively, the P-type substrate and the N-type well are respectively replaced with an N-type substrate and a P-type well.