The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Dec. 05, 2023
International Business Machines Corporation, Armonk, NY (US);
Lijuan Zou, Albany, NY (US);
Tao Li, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Robert Gauthier, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor integrated circuit (IC) device includes both a transistor and a vertical diode. In some examples, the transistor includes a backside source/drain (S/D) contact and the vertical diode includes a backside bottom contact. The backside S/D contact and the backside bottom contact may be electrically connected to a backside BEOL network. The transistor may further include a S/D region that includes an upper S/D portion and a trench S/D portion that has a higher dopant concentration relative to the upper portion. The backside S/D contact may be connected to the trench S/D portion of the S/D region. The vertical diode may include a bottom doped region which may be simultaneously formed along with the trench S/D portion and may be composed of substantially the same materials. The backside bottom contact may be directly connected to the bottom doped region of the vertical diode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile