The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Aug. 19, 2021
Air Water Inc., Osaka, JP;
Air Water Inc., Osaka, JP;
Abstract
A compound semiconductor substrate and a compound semiconductor device with high quality is provided. The compound semiconductor substrate includes a Si substrate with O concentration of 3*10/cmor more and 3*10/cmor less, a SiC layer formed on the Si substrate, a first nitride semiconductor layer made of AlGaN (0.1≤x≤1), formed on the SiC layer and including an insulating or semi-insulating layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and containing a C—GaN layer, and an electronic traveling layer formed on the second nitride semiconductor layer and comprising of AlGaN (0≤z<0.1). The sum total thickness of the first nitride semiconductor layer, the second nitride semiconductor layer and the electronic traveling layer is 6 micrometers or more and 10 micrometers or less.