The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Dec. 09, 2022
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventor:

Kai Cheng, Suzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); B82Y 10/00 (2011.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/23 (2025.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/014 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10P 14/24 (2026.01); H10P 14/271 (2026.01); H10P 14/3416 (2026.01); H10P 14/3462 (2026.01);
Abstract

A semiconductor device includes: a substrate, a first support structure, a first nanowire heterojunction, a source, a drain, and a ring-shaped gate. The substrate includes a first region, and a second region and a third region located on respective sides of the first region; the first support structure is located at least on the second region and the third region; the first nanowire heterojunction includes a first gate section corresponding to the first region, a first source section corresponding to the second region, and a first drain section corresponding to the third region; the first source section and the first drain section are located on the first support structure. The source is located on the first source section, the drain is located on the first drain section, and the ring-shaped gate wraps the first gate section.


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