The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jul. 27, 2023
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Jixin Yu, Milpitas, CA (US);
Koichi Matsuno, Fremont, CA (US);
Ruogu Matthew Zhu, San Jose, CA (US);
Johann Alsmeier, San Jose, CA (US);
Assignee:
Sandisk Technologies, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02);
Abstract
A three-dimensional memory device includes laterally spaced apart vertical stacks of electrically conductive layers and insulating layers. A composite dielectric isolation structure provides electrical isolation between neighboring pairs of vertical stacks. The composite dielectric isolation structure includes at least one retro-stepped dielectric material portion, and may further include at least one finned insulating support structure or a vertical stack of dielectric material plates.