The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jul. 27, 2021
Changxin Memory Technologies, Inc., Hefei City, CN;
Joon Mo Kwon, Hefei, CN;
ChangXin Memory Technologies, Inc., Hefei, CN;
Abstract
A method of producing a semiconductor memory device includes following operations. A substrate is provided. A stacked structure is formed on the substrate. Capacitor holes arranged at intervals are formed in the stacked structure. Bottom electrode layers are formed in the capacitor holes. A top-layer dielectric layer is removed. A first capacitor dielectric layer is formed on exposed surfaces of a sacrificial layer and surfaces of upper parts of the bottom electrode layers. A first top electrode layer is formed on a surface of the first capacitor dielectric layer. Multiple openings are formed in the first top electrode layer and first capacitor dielectric layer. The sacrificial layer is removed through the openings. A second capacitor dielectric layer is formed. A second top electrode layer is formed on a surface of the second capacitor dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile