The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Nov. 26, 2024
Applicants:

Nexperia B.v, Nijmegen, NL;

Nexperia Technology (Shanghai) Ltd., Shanghai, CN;

Inventors:

Shiwu Zhu, Manchester, GB;

Chunlin Zhu, Manchester, GB;

Ke Jiang, Shanghai, CN;

Assignees:

Nexperia B.V., Nijmegen, NL;

Nexperia Technology (Shanghai) Ltd., Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
H03K 17/168 (2013.01); H03K 17/0828 (2013.01);
Abstract

A power semiconductor device has a power semiconductor die forming a power switch with an input pad, an output pad, and a control pad; a collector power terminal coupled to the input pad of the power switch; an auxiliary gate terminal coupled to the control pad of the power switch; an emitter power terminal; two or more inductance/resistance pairs, with each inductance/resistance pair having a common stray inductance and a resistance arranged in series between the output pad of the power switch and the emitter power terminal; and a plurality of auxiliary emitter terminals that are coupled to both sides of the inductance/resistance pairs so that one auxiliary emitter terminal is coupled to one side of one inductance/resistance pair. A control circuit for di/dt control can control the power semiconductor device. An electronic device can include the power semiconductor device and control circuit.


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