The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Aug. 27, 2024
Applicant:

Elemental Scientific, Inc., Omaha, NE (US);

Inventors:

Jacob Unnerstall, Omaha, NE (US);

Brianna Dufek, Bennington, NE (US);

Daniel R. Wiederin, Omaha, NE (US);

Suhas Ketkar, San Diego, CA (US);

Austin Schultz, Omaha, NE (US);

Kyle W. Uhlmeyer, Omaha, NE (US);

Beau A. Marth, La Vista, NE (US);

Assignee:

Elemental Scientific, Inc., Omaha, NE (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 49/04 (2006.01); B01F 23/40 (2022.01); G01N 1/28 (2006.01); G01N 33/00 (2006.01); H10P 70/00 (2026.01); H10P 72/00 (2026.01); H01J 49/10 (2006.01); H01J 49/40 (2006.01); H01J 49/42 (2006.01);
U.S. Cl.
CPC ...
H01J 49/0445 (2013.01); B01F 23/405 (2022.01); B01F 23/49 (2022.01); G01N 1/28 (2013.01); G01N 33/0095 (2024.05); H01J 49/0495 (2013.01); H10P 70/20 (2026.01); H10P 72/0414 (2026.01); G01N 2001/2893 (2013.01); H01J 49/105 (2013.01); H01J 49/40 (2013.01); H01J 49/4205 (2013.01);
Abstract

Systems and methods are described for systems and methods for integrated decomposition and scanning of a semiconducting wafer for organic and inorganic impurities. In an aspect, a method includes, but is not limited to, positioning a nozzle above a surface of a semiconducting wafer, the semiconducting wafer supported adjacent to or within an interior of a chamber body; introducing a first scan fluid including one or more organic fluids to an inlet port of the nozzle; directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer; and removing the first scan fluid containing at least a portion of the one or more organic contaminants from the surface of the semiconducting wafer via the nozzle.


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