The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12749530 B1

Date of Patent:

Sep. 29, 2026

Filed:

Dec. 11, 2023

Memory device to sense memory cells without bitline precharge

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Michele Maria Venturini, Milan, IT;

Umberto Di Vincenzo, Capriate San Gervasio, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Greenberg Traurig

Primary Examiner:

Xiaochun L Chen

Int. Cl.

CPC ...

G11C 11/00 (2006.01); G11C 13/00 (2006.01);

U.S. Cl.

CPC ...

G11C 13/004 (2013.01); G11C 13/0004 (2013.01);

Abstract

Systems, methods, and apparatus related to memory devices. In one approach, a memory device controls a power supply to a detector that is used to sense a voltage of a bitline coupled to a memory cell. An output of the detector indicates a logic state of the selected memory cell. By controlling a voltage of the power supply, a detection threshold of the detector can be increased as the voltage on the bitline increases. This permits the detector to be used without requiring precharge of the bitline.

Find Patent Forward Citations

Venturini, Michele. (2026). Memory device to sense memory cells without bitline precharge (U.S. Patent No. 12749530). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12749530

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