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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12748910 B1

PDFFull Text
Date of Patent:
Sep. 29, 2026

Filed:

Jul. 28, 2023

Special cell general database and method for establishing the same and pattern correction method

Applicants:

Hua Hong Semiconductor (Wuxi) Limited, Wuxi, CN;

Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;

Inventors:

Wanjun Deng, Wuxi, CN;

Xiaoliang Jin, Shanghai, CN;

Jiaji Feng, Shanghai, CN;

Assignees:

Hua Hong Semiconductor (Wuxi) Limited, Jiangsu, CN;

Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;

Attorney:

Boyle Fredrickson S.C.

Primary Examiner:

Brian Ngo

Int. Cl.
CPC ...
G06F 30/00 (2020.01); G06F 30/398 (2020.01); G06F 111/20 (2020.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G06F 2111/20 (2020.01);
Abstract

The present disclosure discloses a special cell general database, a method for establishing the special cell general database and a pattern correction method. The pattern correction method includes: providing a to-be-corrected layout including a to-be-corrected region and a to-be-corrected special cell structure region; acquiring a to-be-corrected minimum repeating cell pattern in the to-be-corrected special cell structure region; providing a special cell general database; acquiring an information of a cell correction pattern corresponding to the to-be-corrected minimum repeating cell pattern in the special cell general database; performing an optical proximity correction on the to-be-corrected region to acquire an information of a second correction pattern; acquiring a correction layout according to the information of the second correction pattern and the information of the cell correction pattern. The present disclosure can improve a correction efficiency of the pattern correction method.

Find Patent Forward Citations

Deng, Wanjun. (2026). Special cell general database and method for establishing the same and pattern correction method (U.S. Patent No. 12748910). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12748910

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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