The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Jun. 06, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Feng-Wei Kuo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/124 (2006.01); G02B 6/30 (2006.01);
U.S. Cl.
CPC ...
G02B 6/124 (2013.01); G02B 6/30 (2013.01); G02B 6/305 (2013.01);
Abstract

A semiconductor structure includes a substrate and a metal layer disposed in the substrate. The semiconductor structure includes a dielectric layer disposed over the metal layer. The semiconductor structure further includes a semiconductor layer disposed over the dielectric layer, where the metal layer extends across the semiconductor layer. The semiconductor layer includes a two-dimensional grating coupler including a plurality of scattering elements disposed in the semiconductor layer and a pair of tapered structures extending laterally from the two-dimensional grating coupler.


Find Patent Forward Citations

Kuo, Feng-Wei. (2026). Semiconductor structure and method of fabricating the same (U.S. Patent No. 12748258). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12748258

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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