The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Sep. 20, 2023
Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, TW;
Wei-Jen Chang, Miaoli, TW;
Bor-Jou Lin, Hsinchu, TW;
Hung-Han Lin, Hsinchu, TW;
Chung-Shih Chiang, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hisinchu, TW;
Abstract
A lateral-bipolar junction transistor (BJT) including a semiconductor substrate, an insulator region disposed on the semiconductor substrate, and a well region comprising a well semiconductor of a first conductivity type disposed over the insulator region. An emitter region of a second conductivity type is disposed in the well region, and at least one collector region of a second conductivity type is disposed in the well region. A T shaped, Pi shaped or H shaped gate and gate oxide layer includes a gate portion extending between the emitter region and one or more collector regions, and a base is disposed underneath the gate portion. In other embodiments, a metal oxide semiconductor (MOS) transistor-based circuit similarly employs a compact Pi or H shaped gate and gate oxide layer.