The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Dec. 17, 2024
Applicant:

Sri International, Menlo Park, CA (US);

Inventors:

Namwoong Paik, Lawrenceville, NJ (US);

Peter A. Levine, West Windsor, NJ (US);

John D. Bazzano, Perkasie, PA (US);

Assignee:

SRI International, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 1/42 (2006.01); G01J 1/04 (2006.01); G01J 1/44 (2006.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
G01J 1/4257 (2013.01); G01J 1/0411 (2013.01); G01J 1/0488 (2013.01); G01J 1/44 (2013.01); H10F 39/805 (2025.01); H10F 39/806 (2025.01);
Abstract

A silicon-based image sensor has an upconversion layer of crystals. The silicon-based image sensor receives light from a common beam splitter with a second image sensor. An optical band pass filter cooperates with the common beam splitter to pass some of the light to be incident on the upconversion layer of crystals in a second range of wavelengths, which will be absorbed and converted by the upconversion layer of crystals into a third range of wavelengths, and then the third range of wavelengths is transmitted onto the pixels in the silicon-based image sensor. A pulse repetition frequency decoder cooperates with the upconversion layer of crystals to decode a pulse repetition frequency of a laser flash in the second range of wavelengths passed by the optical band pass filter and subsequently upconverted by the upconversion layer of crystals and then captured by the pixels of the silicon-based image sensor.


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