The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Aug. 28, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Mao-Nan Wang, Kaohsiung, TW;

Chih Hsin Yang, Zhubei, TW;

Liang-Wei Wang, Hsinchu, TW;

Dian-Hau Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 42/00 (2026.01); H10W 20/20 (2026.01);
U.S. Cl.
CPC ...
H10W 42/00 (2026.01); H10W 20/20 (2026.01);
Abstract

Semiconductor devices having dummy regions with dummy fill structures that vary in lateral dimensions and methods for forming the semiconductor devices are provided herein. The semiconductor devices may include a through silicon via extending through a substrate of the semiconductor device, an active device in or on the substrate, and a dummy region of the substrate separating the through silicon via and the active device, the dummy region including dummy fill structures, wherein the dummy fill structures have lateral dimensions measured in a first direction from the through silicon via to the active device, wherein the lateral dimensions of the dummy fill structures varying in the first direction.


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