The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Dec. 19, 2023
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Assignee:
IMEC VZW, Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01); H10W 20/40 (2026.01);
U.S. Cl.
CPC ...
H10W 20/495 (2026.01); H10D 1/042 (2025.01); H10D 1/714 (2025.01); H10D 1/716 (2025.01);
Abstract
The disclosed technology is related to semiconductor components, including a multilayer structure with a plurality of MIM capacitors. The capacitors are realized as an assembly of capacitors in the form of a stack of at least three electrically conductive layers, separated by dielectric layers and formed conformally on a topography defined by a plurality of dielectric pillars distributed on a conductive bottom plate formed on a first level of the multilayer interconnect structure. By realizing a height difference between different pillars or different groups of pillars, the intermediate ayers of the stack become available for contacting the layers by via connections.