The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Jan. 30, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H10W 10/00 (2026.01); H10D 62/10 (2025.01); H10P 50/00 (2026.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10W 10/014 (2026.01); H10D 62/124 (2025.01); H10P 50/692 (2026.01); H10P 50/695 (2026.01); H10W 10/17 (2026.01);
Abstract
Semiconductor devices and methods for forming semiconductor devices are provided. A method includes forming a shallow trench isolation (STI) feature; forming a mask layer over the STI feature; depositing sacrificial material over the mask layer; and etching the sacrificial material to form sacrificial structures over the mask layer, wherein the mask layer prevents etching of the STI feature while etching the sacrificial material.