The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Mar. 04, 2024
Disco Corporation, Tokyo, JP;
Hayato Tanaka, Tokyo, JP;
Hayato Iga, Tokyo, JP;
DISCO CORPORATION, Tokyo, JP;
Abstract
A method of processing a bonded wafer includes a modified layer forming step of applying a laser beam to a first wafer while positioning a focused spot FP of the laser beam within the first wafer to form a modified layer and cracks developed from the modified layer and extending toward an outer circumferential portion of the first wafer along the bonding layer, and a step of grinding the reverse side of the first wafer to thin it. In the modified layer forming step, a plurality of spaced modified layers are formed radially inwardly from the outer circumferential portion of the first wafer, and a line interconnecting the modified layers forms a depression angle ranging from 30 to 80 degrees toward the outer circumferential portion, the modified layers being joined to each other by cracks to form a removal initiating point for removing a chamfered outermost circumferential edge.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile