The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Jan. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuan-Ting Pan, Taipei City, TW;
Kuo-Cheng Chiang, Zhubei City, TW;
Shi-Ning Ju, Hsinchu City, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor structure includes forming fins over a substrate. Each of the fins includes a base fin protruding from the substrate, and first semiconductor layers and second semiconductor layers alternating stacked over the base fin. The method further includes forming an isolation structure between the base fins, forming a hard mask layer over the isolation structure, and removing the second semiconductor layers, so that the first semiconductor layers and the hard mask layer are exposed in a gate trench. The method further includes forming a gate structure in the gate trench. The gate structure wraps around the first semiconductor layers and over the hard mask layer.