Method for reading a multi-level non-volatile memory device, in particular a phase-change memory device, and multi-level non-volatile memory device

Abstract

A multi-level non-volatile memory cell has N levels, N being even and greater than two, corresponding respectively to N logical data that can be stored in the memory cell and to N corresponding read current ranges. A datum stored in the memory cell is read by performing successive comparisons of a read current output by the memory cell with reference currents selected from a set of N−1 reference currents having values respectively lying between two different successive ranges using a dichotomous algorithm starting with the reference current having the median value.