The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Jul. 28, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chan Kyu Lim, Suwon-si, KR;

Yoonbon Koo, Suwon-si, KR;

Hanhim Kang, Suwon-si, KR;

Suji Gim, Suwon-si, KR;

Jongkoo Lim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/52 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
C23C 16/45561 (2013.01); C23C 16/52 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

The present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. In some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. The method further includes filling, through the gas line, the gas tank with a reaction gas. The method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. The method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. The changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.


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