The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Jun. 22, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyeonjeong Hwang, Cheonan-si, KR;

Minjung Kim, Cheonan-si, KR;

Jongyoun Kim, Seoul, KR;

Seokhyun Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 70/05 (2026.01); H10W 70/685 (2026.01); H10W 90/00 (2026.01); H10W 70/60 (2026.01); H10W 74/00 (2026.01); H10W 74/15 (2026.01);
U.S. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 70/05 (2026.01); H10W 70/095 (2026.01); H10W 70/685 (2026.01); H10W 90/00 (2026.01); H10W 90/701 (2026.01); H10W 70/60 (2026.01); H10W 74/00 (2026.01); H10W 74/15 (2026.01); H10W 90/401 (2026.01); H10W 90/722 (2026.01); H10W 90/724 (2026.01); H10W 90/734 (2026.01);
Abstract

Disclosed are semiconductor packages and fabrication methods thereof. The semiconductor package may include a lower substrate, a lower semiconductor chip, a redistribution layer, an upper semiconductor chip, and a through electrode. The lower substrate may include a first dielectric layer, a first conductive pattern having a wiring pattern and an under-bump pattern, a second dielectric layer, and a second conductive pattern. The under-bump pattern may include a first head part and a first tail part. The first head part may have a first lateral surface on the first dielectric layer that is inclined to a top surface of the first dielectric layer. The second conductive pattern may have a second lateral surface on the second dielectric layer that is perpendicular to a top surface of the second dielectric layer.


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