The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Feb. 26, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ki-Il Kim, Suwon-si, KR;

Jisoo Oh, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/85 (2025.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/85 (2025.01); H10W 20/42 (2026.01);
Abstract

Provided is a semiconductor device and method of manufacturing same. The semiconductor device includes: a transistor on a substrate; a first wiring layer on the transistor, the first wiring layer including a first wiring electrically connected to the transistor; and a second wiring layer on the first wiring layer, the second wiring layer including an interlayer insulating layer and a second wiring provided in the interlayer insulating layer, wherein the second wiring includes a line structure and a first via structure, wherein the first via structure vertically connects the line structure and the first wiring, wherein the first via structure includes: a first outer surface in contact with the interlayer insulating layer; and a second outer surface in contact with the interlayer insulating layer and facing a direction opposite from the first outer surface, wherein the first outer surface and the second outer surface are curved surfaces, and wherein a curvature of the first outer surface and a curvature of the second outer surface are different from each other.


Find Patent Forward Citations

Quick Actions:

Kim, Ki-Il. (2026). Semiconductor device and method of manufacturing the same (U.S. Patent No. 12740401). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740401

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