The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jan. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Satyabrata Dash, Hsinchu City, TW;
Jian-Sing Li, Hsinchu City, TW;
Hui-Zhong Zhuang, Kaohsiung City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes first and second gate structures, a metallization layer, and first and second tie-off contacts. The first and second gate structures extend substantially along a first direction and are aligned with each other substantially along the first direction. The metallization layer includes a Vdd line, a Vss line, metal lines between the Vdd line and the Vss line and extending substantially along a second direction different from the first direction. The first tie-off contact overlaps an intersection of the first gate structure and a first one of the Vdd line and the Vss line from a top view. The second tie-off contact overlaps an intersection of the second gate structure and a first one of the metal lines from the top view, wherein said first one of the metal lines is adjacent to a second one of the Vdd line and the Vss line.