The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Sep. 26, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventors:
Da-Jun Lin, Kaohsiung City, TW;
Bin-Siang Tsai, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 20/049 (2026.01); H10W 20/035 (2026.01); H10W 20/056 (2026.01); H10W 20/062 (2026.01); H10W 20/081 (2026.01); H10W 20/42 (2026.01); H10W 20/425 (2026.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a dielectric layer on a substrate; forming a trench in the dielectric layer; forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy; forming a metal layer on the first liner; and planarizing the metal layer and the first liner to form a metal interconnection.
Quick Actions:
Lin, Da-Jun. (2026). Metal interconnect structure and method for fabricating the same (U.S. Patent No. 12740384). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740384
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile