The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Oct. 08, 2024
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A manufacturing method of a semiconductor structure including following steps is provided. A patterned photoresist layer is formed on a substrate by a lithography process. The patterned photoresist layer includes a first opening and a second opening. The first opening includes a first inclined sidewall. An etching process is performed on the substrate by using the patterned photoresist layer as a mask to form a third opening corresponding to the first opening and a fourth opening corresponding to the second opening in the substrate. The third opening includes a second inclined sidewall. A conductive layer is formed on the substrate. The conductive layer fills the third opening and the fourth opening. A portion of the conductive layer is removed by using the conductive layer located in the third opening as a stop layer to form a mark in the third opening and a TSV in the fourth opening.