The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Aug. 11, 2023
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Sangheon Yong, Yongin-si, KR;

Hongsuk Kim, Yongin-si, KR;

Juhyuk Park, Hwaseong-si, KR;

Sungha Choi, Suwon-si, KR;

Kihun Kim, Yongin-si, KR;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); H10P 14/692 (2026.01); H10P 14/694 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6319 (2026.01); H10P 14/6304 (2026.01); H10P 14/6336 (2026.01); H10P 14/6522 (2026.01); H10P 14/6532 (2026.01); H10P 14/6682 (2026.01); H10P 14/6687 (2026.01); H10P 14/69215 (2026.01); H10P 14/69433 (2026.01);
Abstract

Provided is a method of efficiently forming a dense and solid silicon oxide film on a substrate and a method of manufacturing a semiconductor device by using the same. The formation method comprises: providing a substrate to a reaction chamber; forming a flowable silicon nitride film on the substrate; converting the flowable silicon nitride film into a flowable silicon oxide film; densifying the flowable silicon oxide film; and post-treating the densified silicon oxide film with an inert gas plasma to increase a density of the silicon oxide film.


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