The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

May. 18, 2023
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Jihye Yang, Ansan-si, KR;

Hongsuk Kim, Yongin-si, KR;

Juhyuk Park, Hwaseong-si, KR;

Sungha Choi, Suwon-si, KR;

Sangheon Yong, Yongin-si, KR;

Kihun Kim, Yongin-si, KR;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); H10P 14/692 (2026.01); H10P 14/694 (2026.01); H10W 70/69 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6308 (2026.01); H10P 14/6336 (2026.01); H10P 14/6339 (2026.01); H10P 14/6546 (2026.01); H10P 14/6682 (2026.01); H10P 14/6687 (2026.01); H10P 14/69215 (2026.01); H10P 14/69433 (2026.01); H10W 70/69 (2026.01);
Abstract

A substrate processing method comprising providing a substrate having a gap in a surface thereof into a reaction space, partially filling each of the plurality of gaps with a flowable silicon nitride film, forming a silicon oxide film partially filled in the gap by converting the silicon nitride film into the silicon oxide film, fully filling the gap, which is partially filled with the silicon oxide film, with a silicon nitride film, and forming a silicon oxide film to be fully filled in the gap, by converting the silicon nitride film into the silicon oxide film is provided.


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