The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

May. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kuo-Pin Chang, Zhubei City, TW;

Yu-Wei Ting, Taipei City, TW;

Hung-Ju Li, Hsinchu City, TW;

Kuo-Ching Huang, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 79/00 (2026.01); H03H 11/04 (2006.01); H10B 63/00 (2023.01); H10D 1/68 (2025.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 79/00 (2023.02); H10B 63/30 (2023.02); H10B 63/80 (2023.02); H10D 1/692 (2025.01); H10N 70/061 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8413 (2023.02); H10N 70/8613 (2023.02); H10N 70/8828 (2023.02); H03H 11/04 (2013.01);
Abstract

Structures and fabrication methods are disclosed wherein a switch and a capacitor are fabricated sharing the same process flow without the use of an extra mask. A first capacitor electrode is formed in parallel in the same metal layer using the same mask as a component of the PCM switch (e.g., a PCM switch heater electrode). A second capacitor electrode is formed in parallel in the same metal layer using the same mask as another component of the PCM switch (e.g., a PCM switch input pad or a PCM switch heat spreader). The capacitor insulator is formed in parallel in the same layer using the same mask as a PCM switch insulator (e.g., TBR or insulator between heat spreader and PCM layer).


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