The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Sep. 20, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Luxherta Buzi, Chappaqua, NY (US);

Robert L. Bruce, White Plains, NY (US);

Charlie Tabachnick, Astoria, NY (US);

Marinus Johannes Petrus Hopstaken, Carmel, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/801 (2023.02); H10B 63/24 (2023.02); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02);
Abstract

Techniques for improving switching properties of phase change memory devices by boron surface passivation of the phase change memory material are provided. In one aspect, a phase change memory device includes: one or more phase change memory cells, each having a phase change material between a bottom electrode and a top electrode; and a boron-containing and nitrogen-containing bilayer on sidewalls of the phase change material to protect the phase change material from exposure to oxygen. An ovonic threshold switch can be implemented between the bottom electrode and the top electrode, in series with the phase change material. A method of fabricating the present phase change memory devices is also provided.


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