The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
May. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Liang Lu, Tainan City, TW;
Wei-Lin Chen, Tainan City, TW;
Chun-Hao Chou, Tainan City, TW;
Kuo-Cheng Lee, Tainan City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some implementations described herein include a complementary metal oxide semiconductor image sensor device and techniques to form the complementary metal oxide semiconductor image sensor device. The complementary metal oxide semiconductor image sensor device includes a includes a first array of photodiodes stacked over a second array of photodiodes. A polarization structure is between the first array of photodiodes and the second array of photodiodes. Signaling generated by the first array of photodiodes (e.g., signaling corresponding to unpolarized light waves) may be multiplexed with signaling generated by the second array of photodiodes (e.g., signaling corresponding to polarized light waves). The complementary metal oxide semiconductor image sensor device further includes a filter structure that filters visible light waves and near infrared light waves amongst the first array of photodiodes and the second array of photodiodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile