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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12740132 B1

PDFFull Text
Date of Patent:
Sep. 15, 2026

Filed:

Mar. 15, 2024

Semiconductor device with source/drain contact mol cut structure

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Min Gyu Sung, Latham, NY (US);

Tao Li, Slingerlands, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Nicolas Jean Loubet, Guilderland, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

L. Jeffrey Kelly, Esq.

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H10D 84/01 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10D 84/0153 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 62/151 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10W 20/427 (2026.01);
Abstract

A semiconductor device is provided that includes a source/drain contact middle-of-the-line (MOL) cut structure separating two adjacent frontside source/drain contact structures from each other in which one of the separated frontside source/drain contact structures is merged to a via-to-backside power rail (VBPR) structure that is in electrical contact with a backside power distribution network.

Find Patent Forward Citations

Sung, Min. (2026). Semiconductor device with source/drain contact mol cut structure (U.S. Patent No. 12740132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740132

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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