The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Dec. 06, 2023
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
Brent A. Anderson, Jericho, VT (US);
Albert M. Chu, Nashua, NH (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
Reinaldo Vega, Mahopac, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure with extended backside connections is provided. In one embodiment, the semiconductor structure includes a set of backside source/drain contacts, wherein the set of backside source/drain contacts include a first backside source/drain contact, a second backside source/drain contact, and a third backside source/drain contact, a gate that includes a gate extension region, power rail connections that include a signal wire connection in contact with the gate extension region and a first interlayer dielectric, wherein the gate extension region extends from the gate to the signal wire connection, and wherein the signal wire connection is electrically isolated from the second backside source/drain contact and the third backside source/drain contact, and signal wire spacers disposed on sides of the signal wire connection, wherein the signal wire spacers are in contact with the first interlayer dielectric, an extended interlayer dielectric, the second backside source/drain contact, and the third backside source/drain contact.