The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 17, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seungchan Yun, Waterford, NY (US);

Jason Martineau, Fremont, CA (US);

Kang-Ill Seo, Springfield, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/116 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 64/021 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

A semiconductor device includes: a 1source/drain region; a 2source/drain region; a channel structure connecting the 1source/drain region to the 2source/drain region; a gate structure configured to control the channel structure; a backside source/drain contact structure connected to a bottom surface of the 1source/drain region; a backside isolation structure at a lower portion of the semiconductor device; and a 1contact spacer on the backside source/drain contact structure, wherein the 1contact spacer is configured to isolate the backside source/drain contact structure from another circuit element in the backside isolation structure.


Find Patent Forward Citations

Quick Actions:

Yun, Seungchan. (2026). Semiconductor device including backside source/drain contact structure with contact spacer and backside gate contact structure (U.S. Patent No. 12740122). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740122

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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