The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jun. 12, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventors:
Da-Jun Lin, Kaohsiung City, TW;
Fu-Yu Tsai, Tainan City, TW;
Bin-Siang Tsai, Changhua County, TW;
Chung-Yi Chiu, Tainan City, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H10D 30/47 (2025.01); H10D 64/411 (2025.01);
Abstract
A manufacturing method of a semiconductor device includes the following steps. A gate structure is formed on a III-V compound semiconductor layer. A gate silicide layer and a source/drain silicide layer are formed by an anneal process. The gate silicide layer is formed on the gate structure, the source/drain silicide layer is formed on the III-V compound semiconductor layer, and a material composition of the gate silicide layer is different from a material composition of the source/drain silicide layer.