The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Dec. 15, 2023
Changxin Memory Technologies, Inc., Hefei City, CN;
Daohuan Feng, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei City, CN;
Abstract
Provided are a semiconductor structure and a method for forming the same. The method for forming a semiconductor structure includes the following operations. A stack is formed on a substrate. The stack includes interlayer insulating layers and sacrifice layers alternately stacked in a first direction. The stack includes a plurality of storage regions arranged at intervals in a second direction. Part of the sacrifice layers of storage regions is removed to form first trenches between adjacent interlayer insulating layers. Transistor structures are formed in the first trenches. The transistor structures include gate layers covering inner walls of the first trenches and active structures located in the gate layers. A word line extending in the second direction is formed. The word line envelops gate layers of the plurality of storage regions arranged at intervals in the second direction.