The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jun. 20, 2024
Micron Technology, Inc., Boise, ID (US);
Scott E. Schaefer, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Implementations described herein relate to interrupting a memory built-in self-test. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify, based on the one or more bits, that the memory built-in self-test is to be interrupted while the memory built-in self-test is being performed using a test mode. The memory device may be permitted to interrupt the memory built-in self-test while the memory built-in self-test is being performed using the test mode but may not be permitted to interrupt the memory built-in self-test while the memory built-in self-test is being performed using a repair mode. The memory device may interrupt the memory built-in self-test while the memory built-in self-test is being performed using the test mode.