The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Aug. 16, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Xingwei Tang, Wuhan, CN;

Guangchang Ye, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/24 (2013.01); G11C 16/3418 (2013.01);
Abstract

Examples of the present application provide a memory device, a memory system, a memory controller, and an operation method. The memory device includes: an array of memory cells comprising multiple memory cells, wherein a preset number of memory cells form one codeword; and a peripheral circuit coupled with the array of memory cells and configured to: obtain a first result corresponding to at least one codeword at a target read voltage; obtain a first threshold according to the corresponding first result at the target read voltage; make at least one adjustment to the target read voltage, and after each adjustment, obtain a corresponding first result at the adjusted target read voltage; and determine a target valley voltage.


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