The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jan. 17, 2025
Silicon Storage Technology, Inc., San Jose, CA (US);
Viktor Markov, Santa Clara, CA (US);
Alexander Kotov, San Jose, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A method of programming a memory cell to a target program state associated with a target read current, comprising applying a first pulse of programming voltages that includes a first control gate voltage, applying a second pulse of programming voltages that includes a second control gate voltage, performing a read operation that includes detecting currents through the memory cell for different voltages applied to the control gate, determining a first read voltage for the control gate using the detected currents that corresponds to the target read current, determining a target programming voltage using the second voltage, the first read voltage, a control gate nominal read voltage and a tuning factor, erasing the memory cell, applying a third pulse of programming voltages that includes the first control gate voltage, and applying a fourth pulse of programming voltages that includes the target programming voltage applied to the control gate.